Sintered Silicon Carbide (SSiC)

Sintered from high purity ultra-fine silicon carbide powder (sub-micron) in a vacuum furnace at the temperature of 2100°C – 2200°C. The sintering process will densify the green body. Direct Sintered SiC is better grade than Reaction Bonded SiC, and is commonly specified for high temperature work and hard-faced seal components. Pressureless sintering is the sintering of a powder compact (sometimes at very high temperatures, depending on the powder) without applied pressure. This avoids density variations in the final component, which occurs with more traditional hot-pressing methods.